CARBON-FILM OXIDATION-UNDERCUT KINETICS

被引：11

作者：

BERNSTEIN, J ^{[1
]}

KOGER, TB ^{[1
]}

机构：

[1] MOTOROLA INC,ASIC GRP,MESA,AZ 85202

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 08期

关键词：

CARBON - Oxidation - CHEMICAL REACTIONS - Reaction Kinetics;

D O I：

10.1149/1.2096214

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A process is presented for fabricating micromechanical structures or freestanding shapes such as sheets of polysilicon. A sacrificial layer of carbon is deposited on a substrate, followed by a top layer of a second material. After oxidation of the carbon, the top layer is left free. The kinetics of the diffusion-limited oxidation process are modeled and compared to experimental data for the undercut of large (17 multiplied by 8. 6 cm) sheets of polysilicon.

引用

页码：2086 / 2090

页数：5

共 6 条

[1]

BIRD RB, 1960, TRANSPORT PHENOMENA, P504

[2] SILICON RIBBON GROWTH VIA RIBBON-TO-RIBBON (RTR) TECHNIQUE - PROCESS UPDATE AND MATERIAL CHARACTERIZATION [J].