INVESTIGATION OF THE INSB(110)-SN SCHOTTKY-BARRIER BY MEANS OF ELECTRON-ENERGY LOSS SPECTROSCOPY

被引：12

作者：

FORSTER, A

LUTH, H

机构：

来源：

SURFACE SCIENCE | 1987年 / 189卷

关键词：

D O I：

10.1016/S0039-6028(87)80447-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

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页码：307 / 314

页数：8

相关论文

共 11 条

[1] THEORETICAL INTERPRETATION OF SCHOTTKY BARRIERS AND OHMIC CONTACTS
ALLEN, RE
SANKEY, OF
DOW, JD
[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 376 - 385
[2] HEAVILY DOPED CRYSTALS OF N-TYPE INDIUM-ANTIMONIDE
FILIPCHENKO, AS
NASLEDOV, DN
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 27 (01): : 11 - 26
[3] Ibach H., 1982, ELECTRON ENERGY LOSS
[4] INVESTIGATION OF ELECTRONIC-PROPERTIES OF SEMICONDUCTOR INTERFACES AND LAYER SYSTEMS BY ELECTRON ENERGY-LOSS SPECTROSCOPY
LUTH, H
[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 773 - 786
[5] SN OVERLAYERS ON CLEAVED INSB(110) SURFACES
MATTERN, M
LUTH, H
[J]. SURFACE SCIENCE, 1983, 126 (1-3) : 502 - 508
[6] PALIK ED, 1967, SEMICONDUCT SEMIMET, V3, P456
[7] INELASTIC-SCATTERING OF LOW-ENERGY ELECTRONS FROM SN OVERLAYERS ON CLEAVED INSB(110) SURFACES
RITZ, A
LUTH, H
[J]. PHYSICAL REVIEW B, 1985, 32 (10): : 6596 - 6600
[8] SCHOTTKY BARRIERS AND SEMICONDUCTOR BAND STRUCTURES
TERSOFF, J
[J]. PHYSICAL REVIEW B, 1985, 32 (10): : 6968 - 6971
[9] THEORY OF SEMICONDUCTOR HETEROJUNCTIONS - THE ROLE OF QUANTUM DIPOLES
TERSOFF, J
[J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4874 - 4877
[10] ELECTRON-TRANSPORT PHENOMENA IN SMALL-GAP SEMICONDUCTORS
ZAWADZKI, W
[J]. ADVANCES IN PHYSICS, 1974, 23 (03) : 435 - 522