DRY ETCHING FOR PATTERN TRANSFER

被引：37

作者：

LEHMANN, HW

WIDMER, R

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 05期

关键词：

D O I：

10.1116/1.570635

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1177 / 1183

页数：7

共 36 条

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[3]

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[4]

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[5]

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[6] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J].

COBURN, JW ;

WINTERS, HF .

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[7] SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA ETCHING OF SILICON AND ITS COMPOUNDS [J].

COBURN, JW ;

KAY, E .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) :33-41

[8]

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[9]

DARWELL ECD, 1977, EL SOC EXT ABSTR, V77, P400

[10] SURFACE RELIEF STRUCTURES WITH LINEWIDTHS BELOW 2000A [J].

FLANDERS, DC ;

SMITH, HI ;

LEHMANN, HW ;

WIDMER, R ;

SHAVER, DC .

APPLIED PHYSICS LETTERS, 1978, 32 (02) :112-114

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