VOLTAGE CONTRAST IN INTEGRATED-CIRCUITS WITH 100 NM SPATIAL-RESOLUTION BY SCANNING FORCE MICROSCOPY

被引：38

作者：

BOHM, C ^{[1
]}

SAURENBACH, F ^{[1
]}

TASCHNER, P ^{[1
]}

ROTHS, C ^{[1
]}

KUBALEK, E ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH,INST FESTKORPERFORSCH,D-52425 JULICH,GERMANY

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1993年 / 26卷 / 10期

关键词：

D O I：

10.1088/0022-3727/26/10/041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new contactless device internal test technique is introduced based on a scanning force microscope enabling dynamic voltage contrast within passivated integrated circuits. A spatial resolution below 500 nm and voltage resolution down to voltages of 0.2 V amplitude are achieved. For the first time static voltage contrast obtained with the scanning force microscope is shown on passivated integrated circuits. Potential and limits of this test technique are discussed.

引用

页码：1801 / 1805

页数：5

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