5-100 GHZ INP COPLANAR WAVE-GUIDE MMIC DISTRIBUTED-AMPLIFIER

被引：45

作者：

MAJIDIAHY, R

NISHIMOTO, CK

RIAZIAT, M

GLENN, M

SILVERMAN, S

WENG, SL

PAO, YC

ZDASIUK, GA

BANDY, SG

TAN, ZCH

机构：

[1] Varian Res Center, Palo Alto, CA,

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1990年 / 38卷 / 12期

关键词：

D O I：

10.1109/22.64584

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single-stage 5-100 GHz InP MMIC amplifier with an average gain of more than 5.5 dB has been developed. This MMIC distributed amplifier has the highest frequency and bandwidth of operation (5-100 GHz) reported to date for wide-band amplifiers. The average associated (not optimized) noise figure of the MMIC amplifier was approximately 5.8 dB measured over 4-40 GHz. The active devices in this seven-section distributed amplifier were 0.1-mu-m mushroom gate, InGaAs-InAlAs lattice-matched HEMT's on a semi-insulating InP substrate. Coplanar waveguide was the transmission medium for this 100 GHz MMIC with an overall chip dimension of 500-mu-m by 860-mu-m.

引用

页码：1986 / 1993

页数：8

共 13 条

[1]

AUST M, 1989, GAAS IC SYMPOSIUM /, P95

[2]

CHEN KY, 1980, APPL PHYS LETT, V40, P423

[3]

Duh K. H. G., 1989, IEEE 1989 MTT-S International Microwave Symposium Digest (Cat. No.89CH2725-0), P805, DOI 10.1109/MWSYM.1989.38845

[4]

Lan G. L., 1989, IEEE 1989 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers (Cat. No.89CH2761-5), P95, DOI 10.1109/MCS.1989.37271

[5] 100-GHZ ACTIVE ELECTRONIC PROBE FOR ON-WAFER S-PARAMETER MEASUREMENTS [J].