94 GHZ INP MMIC 5-SECTION DISTRIBUTED-AMPLIFIER

被引：14

作者：

MAJIDIAHY, R

RIAZIAT, M

NISHIMOTO, C

GLENN, M

SILVERMAN, S

WENG, S

PAO, YC

ZDASIUK, G

BANDY, S

TAN, Z

机构：

[1] Varian Research Center Device, CA 94303, Laboratory 611 Hansen Way, Palo Alto

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 02期

关键词：

Amplifiers; Integrated circuits; Microwave ampli; Semiconductor devices and materials;

D O I：

10.1049/el:19900061

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single-stage 94 GHz InP MMIC amplifier with 6·4 dB gain at 94 GHz has been developed, which is the highest frequency MMIC amplifier reported to date. Lattice-matched GaInAs/AIInAs HEMTs with 0·1 μm mushroom gates were the active devices. The CPW MMIC chip dimensions are 500μm. ⨯ 670 ·m. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：91 / 92

页数：2

共 5 条

[1] AUST M, 1989, GAAS IC SYMPOSIUM /, P95
[2] Duh K. H. G., 1989, IEEE 1989 MTT-S International Microwave Symposium Digest (Cat. No.89CH2725-0), P805, DOI 10.1109/MWSYM.1989.38845
[3] 100-GHZ ACTIVE ELECTRONIC PROBE FOR ON-WAFER S-PARAMETER MEASUREMENTS
MAJIDIAHY, R
SHAKOURI, M
BLOOM, DM
[J]. ELECTRONICS LETTERS, 1989, 25 (13) : 828 - 830
[4] MAJIDIAHY R, 1989, PICOSECOND ELECTRONI
[5] HEMT MILLIMETER WAVE MONOLITHIC AMPLIFIER ON INP
RIAZIAT, M
PAO, YC
NISHIMOTO, C
ZDASIUK, G
BANDY, S
WENG, SL
[J]. ELECTRONICS LETTERS, 1989, 25 (20) : 1328 - 1329

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