POSITRON-ANNIHILATION IN AMORPHOUS, TRIGONAL AND ALPHA-MONOCLINIC SELENIUM

被引：6

作者：

ITOH, F

MATSUURA, M

SUZUKI, K

MIYATA, Y

NOGUCHI, S

机构：

[1] MIYAGI TECH COLL,NATORI 98112,JAPAN

[2] NAGOYA UNIV,DEPT APPL PHYS,NAGOYA 467,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1978年 / 45卷 / 05期

关键词：

D O I：

10.1143/JPSJ.45.1622

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1622 / 1625

页数：4

共 19 条

[1]

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[3]

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[4]

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[6]

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[8] ELECTRONIC-STRUCTURE OF TRIGONAL AND AMORPHOUS SE AND TE [J].

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[9] ATOMIC ARRANGEMENT IN VITREOUS SELENIUM [J].

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AVERBACH, BL .

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[10] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].

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