MAKING QUANTUM WIRES AND BOXES FOR OPTOELECTRONIC DEVICES

被引:23
作者
MERZ, JL
PETROFF, PM
机构
[1] Center for Quantized Electronic Structures (QUEST), University of California, Santa Barbara
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 9卷 / 1-3期
基金
美国国家科学基金会;
关键词
D O I
10.1016/0921-5107(91)90186-Y
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper will review current techniques used to fabricate low dimensional quantum structures for optoelectronic applications. Work has included the fabrication of quantum wire structures using molecular beam epitaxy (MBE) growth of tilted superlattices on vicinal substrates, observation and modeling of self-ordering effects that occur during this process, extension to antimony-containing III-V compounds, and quantum wire formation in "serpentine superlattices". In addition, we will discuss results obtained using focused ion beam implantation techniques to "write" quantum wires and boxes. Direct growth by both MBE and metal-organic chemical vapor deposition (MOCVD) on lithographically patterned substrates, presently underway at Bellcore, will also be described, along with the electron-beam patterning and MOCVD regrowth of phosphide-based quantum wire and box configurations carried out at the Tokyo Institute of Technology. Application of these various fabrication techniques to semiconductor lasers and high-speed photodetectors will be discussed.
引用
收藏
页码:275 / 284
页数:10
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