A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF ALAS/GAAS TILTED SUPERLATTICE GROWTH BY MIGRATION-ENHANCED EPITAXY

被引：19

作者：

CHALMERS, SA ^{[1
]}

GOSSARD, AC ^{[1
]}

PETROFF, PM ^{[1
]}

KROEMER, H ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.585039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：431 / 435

页数：5

共 21 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT
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[2] LOW-TEMPERATURE (350-DEGREES-C) GROWTH OF ALGAAS/GAAS LASER DIODE BY MIGRATION ENHANCED EPITAXY
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[3] PHASE-LOCKED RHEED OSCILLATIONS DURING MBE GROWTH OF GAAS AND ALXGA1-XAS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 19 - 25
[4] A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF (100) GAAS VICINAL SURFACES
CHALMERS, SA
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KROEMER, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1357 - 1362
[5] INCORPORATION RATES OF GALLIUM AND ALUMINUM ON GAAS DURING MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE TEMPERATURES
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[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2508 - 2510
[6] (ALAS)1/2(GAAS)1/2 FRACTIONAL-LAYER SUPERLATTICES GROWN ON (001) VICINAL GAAS SUBSTRATES BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
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SAITO, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1373 - 1377
[7] MOLECULAR-BEAM EPITAXY GROWTH OF TILTED GAAS ALAS SUPERLATTICES BY DEPOSITION OF FRACTIONAL MONOLAYERS ON VICINAL (001) SUBSTRATES
GAINES, JM
PETROFF, PM
KROEMER, H
SIMES, RJ
GEELS, RS
ENGLISH, JH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1378 - 1381
[8] MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (02): : 169 - 179
[9] INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE MORPHOLOGY OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
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DRUMMOND, TJ
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FISCHER, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) : 824 - 826
[10] SELF-MASKING SELECTIVE EPITAXY BY MOLECULAR-BEAM METHOD
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[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 940 - 942

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