LOW-TEMPERATURE (350-DEGREES-C) GROWTH OF ALGAAS/GAAS LASER DIODE BY MIGRATION ENHANCED EPITAXY

被引：16

作者：

ASAI, M

SATO, F

IMAMOTO, H

IMANAKA, K

SHIMURA, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 01期

关键词：

D O I：

10.1063/1.341211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：432 / 434

页数：3

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[1] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM
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[2] LOW CURRENT THRESHOLD ALGAAS VISIBLE LASER-DIODES WITH AN (ALGAAS)M(GAAS)N SUPERLATTICE QUANTUM-WELL
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[3] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY
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YAMAGUCHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10): : L868 - L870
[4] PHOTOLUMINESCENCE CHARACTERISTICS OF ALGAAS-GAAS SINGLE QUANTUM-WELLS GROWN BY MIGRATION-ENHANCED EPITAXY AT 300-DEGREES-C SUBSTRATE-TEMPERATURE
HORIKOSHI, Y
KAWASHIMA, M
YAMAGUCHI, H
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (23) : 1686 - 1687