LOW CURRENT THRESHOLD ALGAAS VISIBLE LASER-DIODES WITH AN (ALGAAS)M(GAAS)N SUPERLATTICE QUANTUM-WELL

被引：15

作者：

HAYAKAWA, T

SUYAMA, T

TAKAHASHI, K

KONDO, M

YAMAMOTO, S

HIJIKATA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 11期

关键词：

D O I：

10.1063/1.97064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：636 / 638

页数：3

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共 15 条

[1] LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[4] IMPROVEMENTS IN ALGAAS LASER-DIODES GROWN BY MOLECULAR-BEAM EPITAXY USING A COMPOSITIONALLY GRADED BUFFER LAYER
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[J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 191 - 193
[5] HERSEE SD, 1982, I PHYS C SER, V65, P281
[6] NEW HETEROISOLATION STRIPE-GEOMETRY VISIBLE LIGHT EMITTING LASERS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 421 - 426
[7] NEAR ROOM-TEMPERATURE CW OPERATION OF 660 NM VISIBLE ALGAAS MULTI-QUANTUM-WELL LASER-DIODES GROWN BY MOLECULAR-BEAM EPITAXY
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[8] COMPARISON BETWEEN GAAS AND ALXGA1-XAS QUANTUM WELLS IN THE LIGHT-EMISSION LIMIT
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (02): : L101 - L103
[9] VERY NARROW GRADED-BARRIER SINGLE QUANTUM WELL LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 912 - 914
[10] EXCITONIC PHOTOLUMINESCENCE LINEWIDTHS IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1986, 48 (11) : 727 - 729