IMPROVEMENTS IN ALGAAS LASER-DIODES GROWN BY MOLECULAR-BEAM EPITAXY USING A COMPOSITIONALLY GRADED BUFFER LAYER

被引:11
作者
HAYAKAWA, T
SUYAMA, T
KONDO, M
TAKAHASHI, K
YAMAMOTO, S
HIJIKATA, T
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D O I
10.1063/1.97166
中图分类号
O59 [应用物理学];
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页码:191 / 193
页数:3
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