HIGH SCHOTTKY-BARRIER HEIGHT OF THE AL-N-GAAS DIODES ACHIEVED BY SPUTTER-DEPOSITION

被引：11

作者：

CHEN, CP ^{[1
]}

CHANG, YA ^{[1
]}

HUANG, JW ^{[1
]}

KUECH, TF ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT CHEM ENGN,MADISON,WI 53706

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.111900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermally stable Al/n-GaAs Schottky contacts, up to annealing temperature at 500-degrees-C for 20 s, have been realized by sputter deposition. The Schottky barrier height was 0.75 eV (0.9 eV) when using the current-voltage (I-V) [capacitance-voltage (C-V)] method with an ideality factor of 1.09 for the as-deposited samples. The Schottky barrier height increased to 0.97 eV (1.06 eV) with an ideality factor of 1.07 after annealing at 400-degrees-C for 20 s. The discrepancy between I-V and C-V measurements was attributed to deep levels existing in the GaAs substrate. A (200) dark-field cross-section transmission electron microscopy image of the contact after annealing at 600-degrees-C showed that the (Ga,Al)As phase formed at the interface and the enhancement of the Schottky barrier height was due to the formation of this phase.

引用

页码：1413 / 1415

页数：3

共 13 条

[1]

CHANG YA, 1992, MATER RES SOC SYMP P, V260, P43

[2] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].