AL-GAAS (001) SCHOTTKY-BARRIER FORMATION

[1] ANDERSSON TG, 1981, 222 GOTH I PHYS REP

[2] BACKRACH RZ, 1978, J VAC SCI TECHNOL, V15, P1340

[3] SURFACE X-RAY ABSORPTION-SPECTROSCOPY - SURFACE EXAFS AND SURFACE XANES [J]. APPLIED SURFACE SCIENCE, 1980, 6 (3-4) : 392 - 418

[4] BOREGO JM, 1977, SOLID STATE ELECTRON, V20, P125

[5] ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 661 - 666

[6] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1979, 42 (06) : 397 - 401

[7] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3328 - 3332

[8] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729

[9] EFFECTIVE BARRIER HEIGHTS OF MIXED PHASE CONTACTS - SIZE EFFECTS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 634 - 636

[10] THE EFFECT OF SUBSTRATE-EPITAXIAL INTERFACE ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF SCHOTTKY BARRIERS FORMED ON SPUTTERED FILMS OF GALLIUM-ARSENIDE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 807 - 810

[1] ANDERSSON TG, 1981, 222 GOTH I PHYS REP

[2] BACKRACH RZ, 1978, J VAC SCI TECHNOL, V15, P1340

[3] SURFACE X-RAY ABSORPTION-SPECTROSCOPY - SURFACE EXAFS AND SURFACE XANES [J]. APPLIED SURFACE SCIENCE, 1980, 6 (3-4) : 392 - 418

[4] BOREGO JM, 1977, SOLID STATE ELECTRON, V20, P125

[5] ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 661 - 666

[6] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1979, 42 (06) : 397 - 401

[7] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3328 - 3332

[8] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729

[9] EFFECTIVE BARRIER HEIGHTS OF MIXED PHASE CONTACTS - SIZE EFFECTS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 634 - 636

[10] THE EFFECT OF SUBSTRATE-EPITAXIAL INTERFACE ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF SCHOTTKY BARRIERS FORMED ON SPUTTERED FILMS OF GALLIUM-ARSENIDE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 807 - 810