MAGNETIC EASY-AXIS RANDOMLY INPLANE ORIENTED BARIUM HEXAFERRITE THIN-FILM MEDIA

被引:94
作者
SUI, XY
KRYDER, MH
机构
[1] Data Storage Systems Center, Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh
关键词
D O I
10.1063/1.110755
中图分类号
O59 [应用物理学];
学科分类号
摘要
High coercivity, c-axis randomly in-plane oriented barium hexaferrite thin films have been successfully fabricated by using conventional rf diode sputtering and post-deposition annealing. Coercivities as high as 4100 Oe have been achieved. M(s), S(q), S*, SFD, and SFD(r) reach the values of about 270 emu/cc, 0.63, 0.90, 0.12, and 0.084, respectively. CoTi doping not only reduces the coercivity, but also reduces the grain size and improves the c-axis in-plane orientation. The composition of doped films can be controlled through different diffusion processes. In this way coercivities in a range between several hundred oersteds and 4000 Oe can be easily obtained.
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页码:1582 / 1584
页数:3
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