TECHNIQUE FOR STUDY OF GUNN DEVICES AT 9.1 GHZ USING A SCANNING ELECTRON-MICROSCOPE

被引：20

作者：

GOPINATH, A ^{[1
]}

HILL, MS ^{[1
]}

机构：

[1] UNIV COLL N WALES,SCH ELECTR ENGN SCI,BANGOR,CAERNARVONSHIRE,WALES

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 07期

关键词：

D O I：

10.1109/T-ED.1973.17711

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：610 / 612

页数：3

相关论文

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[2] GOPINATH A, 1971, J PHYS E SCI INSTRUM, V4, P610
[3] GOPINATH A, 1970, 7TH P INT C EL MICR, V1, P203
[4] PROPERTIES OF A FREE STEADILY TRAVELLING ELECTRICAL DOMAIN IN GAAS
GUNN, JB
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (04) : 300 - +
[5] TIME-RESOLVED SCANNING ELECTRON MICROSCOPY AND ITS APPLICATION TO BULK-EFFECT OSCILLATORS
MACDONALD, NC
ROBINSON, GY
WHITE, RM
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4516 - +