DYNAMICAL SHIFT AND BROADENING OF CORE EXCITONS IN SEMICONDUCTORS

被引：181

作者：

STRINATI, G

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.49.1519

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1519 / 1522

页数：4

共 23 条

[1] SUBSTITUTIONAL DONORS AND CORE EXCITONS IN MANY-VALLEY SEMICONDUCTORS
ALTARELLI, M
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (03) : 205 - 208
[2] ALTARELLI M, 1978, J PHYS PARIS C, V39, P95
[3] BASSANI F, 1975, ELECTRONIC STATES OP, pCH6
[4] THEORY OF CORE EXCITONS IN SEMICONDUCTORS
BECHSTEDT, F
ENDERLEIN, R
KOCH, M
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 99 (01): : 61 - 70
[5] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[6] LOCAL-FIELD AND EXCITONIC EFFECTS IN OPTICAL-SPECTRUM OF A COVALENT CRYSTAL
HANKE, W
SHAM, LJ
[J]. PHYSICAL REVIEW B, 1975, 12 (10) : 4501 - 4511
[7] MANY-PARTICLE EFFECTS IN THE OPTICAL-SPECTRUM OF A SEMICONDUCTOR
HANKE, W
SHAM, LJ
[J]. PHYSICAL REVIEW B, 1980, 21 (10): : 4656 - 4673
[8] Hedin L., 1970, SOLID STATE PHYS, V23, P1, DOI DOI 10.1016/S0081-1947(08)60615-3
[9] GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES
HIMPSEL, FJ
HEIMANN, P
CHIANG, TC
EASTMAN, DE
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (13) : 1112 - 1115
[10] THEORY OF CORE EXCITONS
HJALMARSON, HP
BUTTNER, H
DOW, JD
[J]. PHYSICAL REVIEW B, 1981, 24 (10): : 6010 - 6019