THEORY OF CORE EXCITONS IN SEMICONDUCTORS

被引:17
作者
BECHSTEDT, F
ENDERLEIN, R
KOCH, M
机构
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1980年 / 99卷 / 01期
关键词
D O I
10.1002/pssb.2220990104
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:61 / 70
页数:10
相关论文
共 38 条
[1]  
ALTARELLI M, 1977, 5 P INT C VAC UV RAD, pC4
[2]   THERMOREFLECTANCE AND TEMPERATURE-DEPENDENCE OF L2,3 SOFT-X-RAY THRESHOLD IN SI [J].
ASPNES, DE ;
BAUER, RS ;
BACHRACH, RZ ;
MCMENAMIN, JC .
PHYSICAL REVIEW B, 1977, 16 (12) :5436-5442
[3]   ELECTROREFLECTANCE OF GASB FROM 0.6 TO 26 EV [J].
ASPNES, DE ;
OLSON, CG ;
LYNCH, DW .
PHYSICAL REVIEW B, 1976, 14 (10) :4450-4458
[4]   ELECTROREFLECTANCE OF GAAS AND GAP TO 27 EV USING SYNCHROTRON RADIATION [J].
ASPNES, DE ;
OLSON, CG ;
LYNCH, DW .
PHYSICAL REVIEW B, 1975, 12 (06) :2527-2538
[5]  
ASPNES DE, 1976, 13TH P INT C PHYS SE, P1000
[6]  
BASSANI F, 1979, I PHYS C SER, V43, P1355
[7]   SOFT-X-RAY ELECTROREFLECTANCE - FINAL-STATE EFFECTS ON SI(2P) OPTICAL-TRANSITIONS [J].
BAUER, RS ;
BACHRACH, RZ ;
MCMENAMIN, JC ;
ASPNES, DE .
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1977, 39 (02) :409-416
[8]   IONICITY EFFECTS ON COMPOUND SEMICONDUCTOR (110) SURFACES [J].
BAUER, RS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :899-903
[9]   ELECTRONIC POLARIZATION (RELAXATION) EFFECTS IN THE CORE LEVEL SPECTRA OF SEMICONDUCTORS .1. GENERAL-THEORY OF ELECTRONIC POLARIZATION (RELAXATION) IN SEMICONDUCTORS [J].
BECHSTEDT, F ;
ENDERLEIN, R .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 94 (01) :239-248
[10]   ELECTRONIC POLARIZATION (RELAXATION) EFFECTS IN THE CORE LEVEL SPECTRA OF SEMICONDUCTORS .2. APPLICATION TO GA3D AND SI2P LEVELS [J].
BECHSTEDT, F ;
ENDERLEIN, R .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 95 (01) :185-194