INTERCONNECTIONS IN VLSI

[1] Black J.R., 1982, 20TH P IEEE INT REL, P300

[2] ELECTROMIGRATION IN THIN ALUMINUM FILMS ON TITANIUM NITRIDE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1203 - 1208

[3] DHEURLE FM, 1978, PHYSICS THIN FILMS I, P243

[4] A 1-MU-M BIPOLAR VLSI TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1373 - 1379

[5] LAYERED AND HOMOGENEOUS FILMS OF ALUMINUM AND ALUMINUM SILICON WITH TITANIUM AND TUNGSTEN FOR MULTILEVEL INTERCONNECTS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) : 94 - 103

[6] GHATE PB, 1982, 20TH ANN P INT REL P, P292

[7] GHATE PB, 1986, AIP C P, V138, P321

[8] GHATE PB, 1982, THIN SOLID FILMS, V45, P69

[9] Kilby J., 1964, Miniaturized electronic circuits, Patent No. [3138743, US3138743]

[10] Noyce R. N., 1961, Semiconductor device-and-lead structure, Patent No. [US2981877, 2981877]

[1] Black J.R., 1982, 20TH P IEEE INT REL, P300

[2] ELECTROMIGRATION IN THIN ALUMINUM FILMS ON TITANIUM NITRIDE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1203 - 1208

[3] DHEURLE FM, 1978, PHYSICS THIN FILMS I, P243

[4] A 1-MU-M BIPOLAR VLSI TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1373 - 1379

[5] LAYERED AND HOMOGENEOUS FILMS OF ALUMINUM AND ALUMINUM SILICON WITH TITANIUM AND TUNGSTEN FOR MULTILEVEL INTERCONNECTS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) : 94 - 103

[6] GHATE PB, 1982, 20TH ANN P INT REL P, P292

[7] GHATE PB, 1986, AIP C P, V138, P321

[8] GHATE PB, 1982, THIN SOLID FILMS, V45, P69

[9] Kilby J., 1964, Miniaturized electronic circuits, Patent No. [3138743, US3138743]

[10] Noyce R. N., 1961, Semiconductor device-and-lead structure, Patent No. [US2981877, 2981877]