MODEL FOR THE ELECTRIC-FIELDS IN LDD MOSFETS .2. FIELD DISTRIBUTION ON THE DRAIN SIDE

[1] BIERMANS P, 1984, THESIS U EINDHOVEN

[2] SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 254 - 262

[3] MINIMOS-3 - A MOSFET SIMULATOR THAT INCLUDES ENERGY-BALANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (05) : 1074 - 1078

[4] HO CP, 1983, SEL83001 STANF U TEC

[5] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 375 - 385

[6] HUANG TY, 1987, IEEE ELECTR DEVICE L, V8, P151, DOI 10.1109/EDL.1987.26584

[7] KINUGAWA M, 1985, S VLSI TECHNOL, P116

[8] KO PK, 1982, THESIS U CALIFORNIA

[9] A NOVEL IMPACT-IONIZATION MODEL FOR 1-MU-M-MOSFET SIMULATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) : 1057 - 1063

[10] TWO-DIMENSIONAL PHOSPHORUS DIFFUSION FOR SOFT DRAINS IN SILICON MOS-TRANSISTORS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 40 (02): : 101 - 107

[1] BIERMANS P, 1984, THESIS U EINDHOVEN

[2] SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 254 - 262

[3] MINIMOS-3 - A MOSFET SIMULATOR THAT INCLUDES ENERGY-BALANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (05) : 1074 - 1078

[4] HO CP, 1983, SEL83001 STANF U TEC

[5] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 375 - 385

[6] HUANG TY, 1987, IEEE ELECTR DEVICE L, V8, P151, DOI 10.1109/EDL.1987.26584

[7] KINUGAWA M, 1985, S VLSI TECHNOL, P116

[8] KO PK, 1982, THESIS U CALIFORNIA

[9] A NOVEL IMPACT-IONIZATION MODEL FOR 1-MU-M-MOSFET SIMULATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) : 1057 - 1063

[10] TWO-DIMENSIONAL PHOSPHORUS DIFFUSION FOR SOFT DRAINS IN SILICON MOS-TRANSISTORS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 40 (02): : 101 - 107