A NOVEL IMPACT-IONIZATION MODEL FOR 1-MU-M-MOSFET SIMULATION

被引：22

作者：

KUHNERT, R

WERNER, C

SCHUTZ, A

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1985.22074

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1057 / 1063

页数：7

共 30 条

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