ELECTRICAL PROPERTIES OF SILICONE FILMS ON SILICON

[1] BERGLUND CN, 1966, T IEEE EL DEV, VED13, P701

[2] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 897 - &

[3] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) : 1873 - &

[4] Eaborn C., 1960, ORGANOSILICON COMPOU

[5] FITZGERALD DJ, 1968, SURFACE SCIENCE, V9, P317

[6] FORDHAM S, 1960, SILICONES

[7] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[8] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 783 - +

[9] HEALS RN, 1959, SILICONES

[10] HEIMAN FP, 1965, IEEE T ELECTRON DEVI, VED12, P167

[1] BERGLUND CN, 1966, T IEEE EL DEV, VED13, P701

[2] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 897 - &

[3] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) : 1873 - &

[4] Eaborn C., 1960, ORGANOSILICON COMPOU

[5] FITZGERALD DJ, 1968, SURFACE SCIENCE, V9, P317

[6] FORDHAM S, 1960, SILICONES

[7] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[8] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 783 - +

[9] HEALS RN, 1959, SILICONES

[10] HEIMAN FP, 1965, IEEE T ELECTRON DEVI, VED12, P167