BORON CONTAMINATION AND PRECIPITATION DURING THE GROWTH OF INP

被引：9

作者：

OBERSTAR, JD

STREETMAN, BG

BAKER, JE

WILLIAMS, P

HENRY, RL

SWIGGARD, EM

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 54卷 / 03期

关键词：

D O I：

10.1016/0022-0248(81)90497-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：443 / 448

页数：6

共 20 条

[1] LEC GROWTH OF LARGE INP SINGLE-CRYSTALS [J].

ANTYPAS, GA .

JOURNAL OF CRYSTAL GROWTH, 1976, 33 (01) :174-176

[2]

ANTYPAS GA, 1977, I PHYS C SER B, V33, P55

[3]

BACHMANN KJ, 1975, I PHYS C SER, V24, P121

[4]

Blom G. M., 1973, Acta Electronica, V16, P315

[5] THE GROWTH AND PERFECTION OF SINGLE-CRYSTAL INDIUM-PHOSPHIDE PRODUCED BY THE LEC TECHNIQUE [J].

COCKAYNE, B ;

BROWN, GT ;

MACEWAN, WR .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :9-15

[6] TECHNIQUES FOR MELT-GROWTH OF LUMINESCENT SEMICONDUCTOR CRYSTALS UNDER PRESSURE [J].

FISCHER, AG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (02) :C41-&

[7]

FOLBERTH DG, 1955, Z NATURFORSCH A, V10, P615

[8]

HENRY RL, 1977, I PHYS C SER B, V33, P28

[9] INCORPORATION OF BORON DURING THE GROWTH OF GAAS SINGLE-CRYSTALS [J].

HOPKINS, CG ;

DELINE, VR ;

BLATTNER, RJ ;

EVANS, CA ;

MAGEE, TJ .

APPLIED PHYSICS LETTERS, 1980, 36 (12) :989-990

[10] LIQUID-ENCAPSULATED CZOCHRALSKI GROWTH OF INP CRYSTALS [J].

ISELER, GW .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :16-20

← 1 2 →