THE GROWTH AND PERFECTION OF SINGLE-CRYSTAL INDIUM-PHOSPHIDE PRODUCED BY THE LEC TECHNIQUE

被引：24

作者：

COCKAYNE, B

BROWN, GT

MACEWAN, WR

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 54卷 / 01期

关键词：

D O I：

10.1016/0022-0248(81)90242-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：9 / 15

页数：7

共 13 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&

[2]

BARDSLEY W, 1975, I PHYS C SERIES, V24, P355

[3] ETCH FEATURES IN CZOCHRALSKI-GROWN SINGLE-CRYSTAL INDIUM-PHOSPHIDE [J].

BROWN, GT ;

COCKAYNE, B ;

MACEWAN, WR .

JOURNAL OF MATERIALS SCIENCE, 1980, 15 (10) :2539-2549

[4] THE GROWTH OF DISLOCATION-FREE GE-DOPED INP [J].

BROWN, GT ;

COCKAYNE, B ;

MACEWAN, WR .

JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) :369-372

[5] DEFORMATION-BEHAVIOR OF SINGLE-CRYSTALS OF INP IN UNIAXIAL COMPRESSION [J].

BROWN, GT ;

COCKAYNE, B ;

MACEWAN, WR .

JOURNAL OF MATERIALS SCIENCE, 1980, 15 (06) :1469-1477

[6] IMPURITIES IN SINGLE-CRYSTAL INDIUM-PHOSPHIDE [J].

COCKAYNE, B ;

MACEWAN, WR ;

BROWN, GT .

JOURNAL OF MATERIALS SCIENCE, 1980, 15 (11) :2785-2794

[7] DISLOCATION CLUSTERS IN CZOCHRALSKI-GROWN SINGLE-CRYSTAL INDIUM-PHOSPHIDE [J].

COCKAYNE, B ;

BROWN, GT ;

MACEWAN, WR .

JOURNAL OF CRYSTAL GROWTH, 1981, 51 (03) :461-469

[8]

COCKAYNE B, 1981, J MATER SCI, V16, P555

[9]

COCKAYNE B, UNPUBLISHED

[10] STUDY OF THE DEEP ACCEPTOR LEVELS OF IRON IN INP [J].

FUNG, S ;

NICHOLAS, RJ ;

STRADLING, RA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23) :5145-5155

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