MOLECULAR-BEAM EPITAXY OF INSB/CDTE HETEROSTRUCTURES

被引：9

作者：

GLENN, JL ^{[1
]}

O, S ^{[1
]}

KOLODZIEJSKI, LA ^{[1
]}

GUNSHOR, RL ^{[1
]}

KOBAYASHI, M ^{[1
]}

LI, D ^{[1
]}

OTSUKA, N ^{[1
]}

HAGGEROTT, M ^{[1
]}

PELEKANOS, N ^{[1
]}

NURMIKKO, AV ^{[1
]}

机构：

[1] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.584727

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：249 / 252

页数：4

共 17 条

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[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF CDTE-FILMS ON INSB
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[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH STRUCTURAL PERFECTION, HETERO-EPITAXIAL CDTE-FILMS ON INSB (001)
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[5] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INSB CDTE HETEROJUNCTIONS FOR MULTILAYER STRUCTURES
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[6] GUNSHOR RL, 1988, AUG NATO ADV RES WOR
[7] KOLODZIEJSKI LA, 1988, MAT RES SOC S, V102, P113
[8] INSB-CDTE INTERFACES - A COMBINED STUDY BY SOFT-X-RAY PHOTOEMISSION, LOW-ENERGY ELECTRON-DIFFRACTION, AND RAMAN-SPECTROSCOPY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1233 - 1238
[9] GROWTH OF SB AND INSB BY MOLECULAR-BEAM EPITAXY
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WOOD, CEC
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7416 - 7420
[10] RECOMBINATION RADIATION FROM INSB
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[J]. PHYSICAL REVIEW, 1965, 140 (2A): : A576 - +