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SURFACE NUCLEATION KINETICS OF MOLECULAR-BEAM EPITAXIAL DOPED (001) AND (111) CDTE
被引:26
作者
:
BENSON, JD
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
BENSON, JD
[
1
]
SUMMERS, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
SUMMERS, CJ
[
1
]
机构
:
[1]
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1988年
/ 86卷
/ 1-4期
关键词
:
REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION - SURFACE NUCLEATION;
D O I
:
10.1016/0022-0248(90)90742-4
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:354 / 361
页数:8
相关论文
共 16 条
[1]
(100) AND (111) ORIENTED CDTE GROWN ON (100) ORIENTED GAAS BY MOLECULAR-BEAM EPITAXY
BALLINGALL, JM
论文数:
0
引用数:
0
h-index:
0
BALLINGALL, JM
WROGE, ML
论文数:
0
引用数:
0
h-index:
0
WROGE, ML
LEOPOLD, DJ
论文数:
0
引用数:
0
h-index:
0
LEOPOLD, DJ
[J].
APPLIED PHYSICS LETTERS,
1986,
48
(19)
: 1273
-
1275
[2]
SI MOLECULAR-BEAM EPITAXY - A MODEL FOR TEMPERATURE-DEPENDENT INCORPORATION PROBABILITIES AND DEPTH DISTRIBUTIONS OF DOPANTS EXHIBITING STRONG SURFACE SEGREGATION
BARNETT, SA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
BARNETT, SA
GREENE, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
GREENE, JE
[J].
SURFACE SCIENCE,
1985,
151
(01)
: 67
-
90
[3]
SURFACE STOICHIOMETRY AND REACTION-KINETICS OF MOLECULAR-BEAM EPITAXIALLY GROWN (001) CDTE SURFACES
BENSON, JD
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
BENSON, JD
WAGNER, BK
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
WAGNER, BK
TORABI, A
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
TORABI, A
SUMMERS, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
SUMMERS, CJ
[J].
APPLIED PHYSICS LETTERS,
1986,
49
(16)
: 1034
-
1036
[4]
PARA-TYPE CDTE EPILAYERS GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY
BICKNELL, RN
论文数:
0
引用数:
0
h-index:
0
BICKNELL, RN
GILES, NC
论文数:
0
引用数:
0
h-index:
0
GILES, NC
SCHETZINA, JF
论文数:
0
引用数:
0
h-index:
0
SCHETZINA, JF
[J].
APPLIED PHYSICS LETTERS,
1986,
49
(25)
: 1735
-
1737
[5]
TEMPORAL INTENSITY VARIATIONS IN RHEED PATTERNS DURING FILM GROWTH OF GAAS BY MBE
DOBSON, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
DOBSON, PJ
NORTON, NG
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
NORTON, NG
NEAVE, JH
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
NEAVE, JH
JOYCE, BA
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
JOYCE, BA
[J].
VACUUM,
1983,
33
(10-1)
: 593
-
596
[6]
GROWTH OF CD1-XZNX TE BY MOLECULAR-BEAM EPITAXY
FELDMAN, RD
论文数:
0
引用数:
0
h-index:
0
FELDMAN, RD
AUSTIN, RF
论文数:
0
引用数:
0
h-index:
0
AUSTIN, RF
DAYEM, AH
论文数:
0
引用数:
0
h-index:
0
DAYEM, AH
WESTERWICK, EH
论文数:
0
引用数:
0
h-index:
0
WESTERWICK, EH
[J].
APPLIED PHYSICS LETTERS,
1986,
49
(13)
: 797
-
799
[7]
GROWTH AND PROPERTIES OF DILUTE MAGNETIC SEMICONDUCTOR SUPERLATTICES SUPERLATTICES CONTAINING HG1-XMNXTE
HARRIS, KA
论文数:
0
引用数:
0
h-index:
0
HARRIS, KA
HWANG, S
论文数:
0
引用数:
0
h-index:
0
HWANG, S
LANSARI, Y
论文数:
0
引用数:
0
h-index:
0
LANSARI, Y
COOK, JW
论文数:
0
引用数:
0
h-index:
0
COOK, JW
SCHETZINA, JF
论文数:
0
引用数:
0
h-index:
0
SCHETZINA, JF
[J].
APPLIED PHYSICS LETTERS,
1986,
49
(12)
: 713
-
715
[8]
POLARITY DETERMINATION OF CDTE(111) ORIENTATION GROWN ON GAAS(100) BY MOLECULAR-BEAM EPITAXY
HSU, C
论文数:
0
引用数:
0
h-index:
0
HSU, C
SIVANANTHAN, S
论文数:
0
引用数:
0
h-index:
0
SIVANANTHAN, S
CHU, X
论文数:
0
引用数:
0
h-index:
0
CHU, X
FAURIE, JP
论文数:
0
引用数:
0
h-index:
0
FAURIE, JP
[J].
APPLIED PHYSICS LETTERS,
1986,
48
(14)
: 908
-
910
[9]
IWAMURA Y, 1985, JPN J APPL PHYS 1, V24, P361, DOI 10.1143/JJAP.24.361
[10]
MOLECULAR-BEAM EPITAXY
JOYCE, BA
论文数:
0
引用数:
0
h-index:
0
JOYCE, BA
[J].
REPORTS ON PROGRESS IN PHYSICS,
1985,
48
(12)
: 1637
-
1697
←
1
2
→
共 16 条
[1]
(100) AND (111) ORIENTED CDTE GROWN ON (100) ORIENTED GAAS BY MOLECULAR-BEAM EPITAXY
BALLINGALL, JM
论文数:
0
引用数:
0
h-index:
0
BALLINGALL, JM
WROGE, ML
论文数:
0
引用数:
0
h-index:
0
WROGE, ML
LEOPOLD, DJ
论文数:
0
引用数:
0
h-index:
0
LEOPOLD, DJ
[J].
APPLIED PHYSICS LETTERS,
1986,
48
(19)
: 1273
-
1275
[2]
SI MOLECULAR-BEAM EPITAXY - A MODEL FOR TEMPERATURE-DEPENDENT INCORPORATION PROBABILITIES AND DEPTH DISTRIBUTIONS OF DOPANTS EXHIBITING STRONG SURFACE SEGREGATION
BARNETT, SA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
BARNETT, SA
GREENE, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
GREENE, JE
[J].
SURFACE SCIENCE,
1985,
151
(01)
: 67
-
90
[3]
SURFACE STOICHIOMETRY AND REACTION-KINETICS OF MOLECULAR-BEAM EPITAXIALLY GROWN (001) CDTE SURFACES
BENSON, JD
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
BENSON, JD
WAGNER, BK
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
WAGNER, BK
TORABI, A
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
TORABI, A
SUMMERS, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
SUMMERS, CJ
[J].
APPLIED PHYSICS LETTERS,
1986,
49
(16)
: 1034
-
1036
[4]
PARA-TYPE CDTE EPILAYERS GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY
BICKNELL, RN
论文数:
0
引用数:
0
h-index:
0
BICKNELL, RN
GILES, NC
论文数:
0
引用数:
0
h-index:
0
GILES, NC
SCHETZINA, JF
论文数:
0
引用数:
0
h-index:
0
SCHETZINA, JF
[J].
APPLIED PHYSICS LETTERS,
1986,
49
(25)
: 1735
-
1737
[5]
TEMPORAL INTENSITY VARIATIONS IN RHEED PATTERNS DURING FILM GROWTH OF GAAS BY MBE
DOBSON, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
DOBSON, PJ
NORTON, NG
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
NORTON, NG
NEAVE, JH
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
NEAVE, JH
JOYCE, BA
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
JOYCE, BA
[J].
VACUUM,
1983,
33
(10-1)
: 593
-
596
[6]
GROWTH OF CD1-XZNX TE BY MOLECULAR-BEAM EPITAXY
FELDMAN, RD
论文数:
0
引用数:
0
h-index:
0
FELDMAN, RD
AUSTIN, RF
论文数:
0
引用数:
0
h-index:
0
AUSTIN, RF
DAYEM, AH
论文数:
0
引用数:
0
h-index:
0
DAYEM, AH
WESTERWICK, EH
论文数:
0
引用数:
0
h-index:
0
WESTERWICK, EH
[J].
APPLIED PHYSICS LETTERS,
1986,
49
(13)
: 797
-
799
[7]
GROWTH AND PROPERTIES OF DILUTE MAGNETIC SEMICONDUCTOR SUPERLATTICES SUPERLATTICES CONTAINING HG1-XMNXTE
HARRIS, KA
论文数:
0
引用数:
0
h-index:
0
HARRIS, KA
HWANG, S
论文数:
0
引用数:
0
h-index:
0
HWANG, S
LANSARI, Y
论文数:
0
引用数:
0
h-index:
0
LANSARI, Y
COOK, JW
论文数:
0
引用数:
0
h-index:
0
COOK, JW
SCHETZINA, JF
论文数:
0
引用数:
0
h-index:
0
SCHETZINA, JF
[J].
APPLIED PHYSICS LETTERS,
1986,
49
(12)
: 713
-
715
[8]
POLARITY DETERMINATION OF CDTE(111) ORIENTATION GROWN ON GAAS(100) BY MOLECULAR-BEAM EPITAXY
HSU, C
论文数:
0
引用数:
0
h-index:
0
HSU, C
SIVANANTHAN, S
论文数:
0
引用数:
0
h-index:
0
SIVANANTHAN, S
CHU, X
论文数:
0
引用数:
0
h-index:
0
CHU, X
FAURIE, JP
论文数:
0
引用数:
0
h-index:
0
FAURIE, JP
[J].
APPLIED PHYSICS LETTERS,
1986,
48
(14)
: 908
-
910
[9]
IWAMURA Y, 1985, JPN J APPL PHYS 1, V24, P361, DOI 10.1143/JJAP.24.361
[10]
MOLECULAR-BEAM EPITAXY
JOYCE, BA
论文数:
0
引用数:
0
h-index:
0
JOYCE, BA
[J].
REPORTS ON PROGRESS IN PHYSICS,
1985,
48
(12)
: 1637
-
1697
←
1
2
→