POLARITY DETERMINATION OF CDTE(111) ORIENTATION GROWN ON GAAS(100) BY MOLECULAR-BEAM EPITAXY

被引:54
作者
HSU, C
SIVANANTHAN, S
CHU, X
FAURIE, JP
机构
关键词
D O I
10.1063/1.96654
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:908 / 910
页数:3
相关论文
共 6 条
  • [1] FAURIE JP, SURF SCI
  • [2] FAURIE JP, 1985, J VAC SCI TECHNOL
  • [3] CRYSTALLOGRAPHIC POLARITY AND ETCHING OF CADMIUM TELLURIDE
    FEWSTER, PF
    WHIFFIN, PAC
    [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4668 - 4670
  • [4] STUDY OF THE INITIAL-STAGES OF GROWTH OF CDTE ON (001) GAAS
    MAR, HA
    SALANSKY, N
    CHEE, KT
    [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 898 - 900
  • [5] HIGH-RESOLUTION ELECTRON-MICROSCOPE STUDY OF EPITAXIAL CDTE-GAAS INTERFACES
    OTSUKA, N
    KOLODZIEJSKI, LA
    GUNSHOR, RL
    DATTA, S
    BICKNELL, RN
    SCHETZINA, JF
    [J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 860 - 862
  • [6] SIVANANTHAN S, UNPUB