STUDY OF THE INITIAL-STAGES OF GROWTH OF CDTE ON (001) GAAS

被引：50

作者：

MAR, HA

SALANSKY, N

CHEE, KT

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 09期

关键词：

D O I：

10.1063/1.94927

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：898 / 900

页数：3

共 11 条

[1] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J].

ARTHUR, JR .

SURFACE SCIENCE, 1974, 43 (02) :449-461

[2] MBE GROWTH OF (HG, CD, AND TE) COMPOUNDS [J].

CHOW, PP ;

GREENLAW, DK ;

JOHNSON, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :562-563

[3] PHYSICAL METHODS USED FOR CHARACTERIZATION OF MODES OF EPITAXIAL-GROWTH FROM VAPOR-PHASE [J].

LELAY, G ;

KERN, R .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (02) :197-222

[4] COHESIVE ENERGY OF 2-DIMENSIONAL SI(111)-3 X 1 AG AND SI(111)SQUARE ROOT 3-R(30-DEGREES)AG PHASES OF SILVER (DEPOSIT)-SILICON(111) (SUBSTRATE) SYSTEM [J].

LELAY, G ;

MANNEVILLE, M ;

KERN, R .

SURFACE SCIENCE, 1978, 72 (02) :405-422

[5] SURVEY OF HETEROEPITAXIAL GROWTH OF SEMICONDUCTOR-FILMS ON INSULATING SUBSTRATES [J].

MANASEVIT, HM .

JOURNAL OF CRYSTAL GROWTH, 1974, 22 (02) :125-148

[6] CDTE-FILMS ON (001) GAAS CR BY MOLECULAR-BEAM EPITAXY [J].

MAR, HA ;

CHEE, KT ;

SALANSKY, N .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :237-239

[7]

MATSUSHITA Y, 1974, JAPAN J APPL PHY 1 S, V2, P567

[8] MOLECULAR-BEAM EPITAXY OF CDTE AND HG1-XCDXTE ON GAAS (100) [J].

NISHITANI, K ;

OHKATA, R ;

MUROTANI, T .

JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (03) :619-635

[9] AUGER ELECTRON SPECTROSCOPY OF FCC METAL SURFACES [J].

PALMBERG, PW ;

RHODIN, TN .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) :2425-&

[10]

SALANSKY N, 1982, 1ST P CAN TECHN C OT, P103

← 1 2 →