DETERMINATION OF INTRINSIC RESPONSE TIME OF SEMICONDUCTOR AVALANCHES FROM MICROWAVE MEASUREMENTS

被引:18
作者
GOEDBLOED, JJ
机构
关键词
D O I
10.1016/0038-1101(72)90006-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:635 / +
页数:1
相关论文
共 17 条
[1]  
Boittiaux B., 1969, Acta Electronica, V12, P157
[2]  
CLAASSEN M, 1970, P MOGA, V70, P12
[3]   FREQUENCY RESPONSE OF AVALANCHING PHOTODIODES [J].
EMMONS, RB ;
LUCOVSKY, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (03) :297-+
[4]   FM NOISE OF LOW-LEVEL-OPERATING IMPATT-DIODE OSCILLATORS [J].
GOEDBLOE.JJ .
ELECTRONICS LETTERS, 1971, 7 (16) :445-&
[5]  
GOEDBLOED JJ, 1971, EUROPEAN MICROWAVE C
[6]   AVALANCHE REGION OF IMPATT DIODES [J].
GUMMEL, HK ;
SCHARFETTER, DL .
BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (10) :1797-+
[8]   NOISE THEORY FOR READ TYPE AVALANCHE DIODE [J].
HINES, ME .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :158-&
[9]  
Hulin R., 1970, Electronics Letters, V6, P849, DOI 10.1049/el:19700585
[10]  
HULIN R, TO BE PUBLISHED