TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE FROM GAAS SINGLE AND MULTIPLE QUANTUM-WELL HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：205

作者：

JIANG, DS ^{[1
]}

JUNG, H ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.341862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1371 / 1377

页数：7

共 12 条

[1] RESONANT CARRIER CAPTURE BY SEMICONDUCTOR QUANTUM-WELLS
BRUM, JA
BASTARD, G
[J]. PHYSICAL REVIEW B, 1986, 33 (02) : 1420 - 1423
[2] GOEBEL EO, 1983, PHYS REV LETT, V51, P1588
[3] BINDING-ENERGIES OF WANNIER EXCITONS IN GAAS-GA1-XALXAS QUANTUM WELL STRUCTURES
GREENE, RL
BAJAJ, KK
[J]. SOLID STATE COMMUNICATIONS, 1983, 45 (09) : 831 - 835
[4] ULTRATHIN-LAYER (ALAS)M(GAAS)M SUPERLATTICES WITH M = 1,2,3 GROWN BY MOLECULAR-BEAM EPITAXY
ISU, T
JIANG, DS
PLOOG, K
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (01): : 75 - 79
[5] PHOTOLUMINESCENCE OF ALXGA1-XAS/GAAS QUANTUM WELL HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY .2. INTRINSIC FREE-EXCITON NATURE OF QUANTUM WELL LUMINESCENCE
JUNG, H
FISCHER, A
PLOOG, K
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 33 (02): : 97 - 105
[6] EXCITONS IN GAAS QUANTUM WELLS
MILLER, RC
KLEINMAN, DA
[J]. JOURNAL OF LUMINESCENCE, 1985, 30 (1-4) : 520 - 540
[7] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS
SHOCKLEY, W
READ, WT
[J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842
[8] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV
STURGE, MD
[J]. PHYSICAL REVIEW, 1962, 127 (03): : 768 - +
[9] STANDARD THERMODYNAMIC FUNCTIONS FOR FORMATION OF ELECTRONS AND HOLES IN GE, SI, GAAS, AND GAP
THURMOND, CD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : 1133 - 1141
[10] HETEROSTRUCTURE SEMICONDUCTOR-LASERS PREPARED BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (10) : 1119 - 1132

← 1 2 →