A HETEROJUNCTION BIPOLAR-TRANSISTOR WITH SEPARATE CARRIER INJECTION AND CONFINEMENT

被引：47

作者：

LUO, LF ^{[1
]}

EVANS, HL ^{[1
]}

YANG, ES ^{[1
]}

机构：

[1] COLUMBIA UNIV,MICROELECTR SCI LAB,NEW YORK,NY 10027

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 09期

关键词：

D O I：

10.1109/16.34252

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1844 / 1846

页数：3

共 10 条

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[4] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

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[5]

NG CC, 1986, DEC IEDM, P32

[6]

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[7] INGAAS/INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH NEAR-IDEAL BETA-VERSUS IC CHARACTERISTIC [J].

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TEMKIN, H ;

PANISH, MB ;

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BISCHOFF, JC .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) :643-645

[8]

Shockley W., 1951, US Patent, Patent No. 2569347

[9]

Sze S. M., 1981, PHYSICS SEMICONDUCTO, P92

[10]

TIAWARI S, 1987, IEEE T ELECTRON DEVI, V34

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