NEW DIFFUSION-TYPE STRIPE-GEOMETRY INJECTION-LASER

被引：35

作者：

MARSCHALL, P

SCHLOSSER, E

WOLK, C

机构：

[1] AEG-Telefunken, Forschungsinstitut Ulm, D-7900 Ulm, West Germany

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 01期

关键词：

Semiconductor junction lasers;

D O I：

10.1049/el:19790028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The device structure, fabrication process and properties of a new diffusion-type stripe-geometry injection laser are described. A V-groove etched into the laser surface determines the shape of the diffusion front and defines the stripe width. This V-groove laser operates stably in the fundamental transverse mode and exhibits linear kink-free light/current characteristics up to 25 mW per mirror. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：38 / 39

页数：2

共 8 条

[1] CHANNELED-SUBSTRATE PLANAR STRUCTURE (ALGA)AS INJECTION-LASERS
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[2] GRUBER J, 1978, 4TH EUR C OPT COMM G
[3] LASING CHARACTERISTICS OF VERY NARROW PLANAR STRIPE LASERS
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[6] LATERAL-CURRENT CONFINEMENT IN A GAAS PLANAR STRIPE-GEOMETRY AND CHANNELED SUBSTRATE BURIED DH LASER USING REVERSE-BIASED P-N-JUNCTIONS
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[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) : 2629 - 2638
[7] MESA-STRIPE-GEOMETRY DOUBLE-HETEROSTRUCTURE INJECTION LASERS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) : 356 - 361
[8] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE PLANAR STRIPE LASER
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NANNICHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (10) : 1585 - 1592

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