THERMAL TRANSPORT IN FREESTANDING SEMICONDUCTOR FINE WIRES

被引：16

作者：

POTTS, A

KELLY, MJ

HASKO, DG

SMITH, CG

CLEAVER, JRA

AHMED, H

PEACOCK, DC

FROST, JEF

RITCHIE, DA

JONES, GAC

SINGLETON, J

JANSSEN, TJBM

机构：

[1] GEC MARCONI LTD,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND

[2] CATHOLIC UNIV NIJMEGEN,HIGH FIELD MAGNET LAB,6525 ED NIJMEGEN,NETHERLANDS

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1991年 / 9卷 / 03期

关键词：

D O I：

10.1016/0749-6036(91)90250-U

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effects of electron heating in free-standing n+-GaAs wires have been studied over the temperature range 0.45K-4.2K. The results indicate that for low lattice temperatures and heating currents the thermal transport in the wires is dominated by the electronic contribution. However, for lattice temperatures above 1K, an additional contribution to the thermal conductivity is observed that cannot be accounted for by the Wiedemann-Franz law. © 1991.

引用

页码：315 / 318

页数：4

共 8 条

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