SURFACE ROUGHENING WITH QUENCHED DISORDER IN d-DIMENSIONS

被引:10
作者
Buldyrev, Sergey V. [1 ,2 ]
Havlin, Shlomo [1 ,2 ,3 ]
Kertesz, Janos [4 ]
Shehter, Arkady [3 ]
Stanley, H. Eugene [1 ,2 ]
机构
[1] Boston Univ, Ctr Polymer Studies, Boston, MA 02215 USA
[2] Boston Univ, Dept Phys, Boston, MA 02215 USA
[3] Bar Ilan Univ, Dept Phys, Ramat Gan, Israel
[4] Tech Univ Budapest, Inst Phys, H-1521 Budapest 11, Hungary
关键词
D O I
10.1142/S0218348X9300085X
中图分类号
O1 [数学];
学科分类号
0701 ; 070101 ;
摘要
We review recent numerical simulations of several models of interface growth in d-dimensional media with quenched disorder. These models belong to the universality class of anisotropic diode-resistor percolation networks. The values of the roughness exponent alpha = 0.63 0.01 (d =1+1) and alpha = 0.48 +/- 0.02 (d = 2 + 1) are in good agreement with our recent experiments. We study also the diode-resistor percolation on a Cayley tree. We find that P-infinity similar to exp(-A/root p(c)-p), thus suggesting that the critical exponent for P-infinity similar to (p(c)-p)(beta p) , beta(p) = infinity and that the upper critical dimension in this problem is d = d(c) = infinity. Other critical exponents on the Cayley tree are: tau = 3, v(parallel to) = nu(perpendicular to) = gamma = sigma = 0. The exponents related to roughness are: alpha = beta = 0, z = 2.
引用
收藏
页码:827 / 839
页数:13
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