MULTILAYER STRUCTURE FOR EPITAXIAL-GROWTH OF OXIDE-FILMS ON SI WITH AN UNDERLYING ELECTRODE

被引：8

作者：

HUNG, LS

BOSWORTH, LA

机构：

[1] Corporate Research Laboratories, Eastman Kodak Company, Rochester

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 21期

关键词：

D O I：

10.1063/1.109266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Multilayers of CaF2, Pd, and Pt were epitaxially grown on HF treated (100)Si by sequential deposition of the desired materials in ultrahigh vacuum. This structure is suitable for epitaxial growth of oxide films on Si with an underlying electrode. The epitaxial layer CaF2 effectively acts as a barrier to impede metal-substrate reaction, and the metal bilayer Pd/Pt forms an epitaxial electrode with good adhesion to the underlying substrate and high resistance to oxidation. KNbO3 deposited on this multilayer structure showed epitaxial growth in a mixed (001)/(110) orientation.

引用

页码：2625 / 2627

页数：3

共 10 条

[1]

ETZOLD KF, 1992, MATER RES SOC S P, V243, P489

[2] EPITAXIAL-GROWTH OF ALKALINE-EARTH FLUORIDE FILMS ON HF-TREATED SI AND (NH4)2SX-TREATED GAAS WITHOUT INSITU CLEANING [J].