SINGLE-CRYSTAL AL FILMS GROWN BY SPUTTERING ON (111)SI SUBSTRATES

被引：5

作者：

NIWA, H ^{[1
]}

KATO, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT MAT SCI & ENGN,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 20期

关键词：

D O I：

10.1063/1.106925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-crystal growth of Al films deposited by the sputtering method on (111)Si substrates was investigated in detail by transmission electron microscopy studies. A single-crystal epitaxial Al film 500 nm thick was obtained by conducting an appropriate heat treatment during and after the deposition.

引用

页码：2520 / 2521

页数：2

共 9 条

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