EPITAXIAL-GROWTH OF AL ON SI(001) BY SPUTTERING

被引：12

作者：

NIWA, H ^{[1
]}

KATO, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT MAT SCI & ENGN,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 05期

关键词：

D O I：

10.1063/1.105433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxy of Al deposited by sputtering on Si(001) substrates was investigated in detail by transmission electron microscopy studies. Heat treatment during or after deposition and growth to greater thickness enlarged the Al grains in the film and made the epitaxial relationship more distinct. It is confirmed that the Al epitaxy formed by the sputtering method is as perfect as that by other techniques.

引用

页码：543 / 545

页数：3

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