EPITAXIAL-GROWTH OF AL ON SI BY GAS-TEMPERATURE-CONTROLLED CHEMICAL VAPOR-DEPOSITION

被引：34

作者：

KOBAYASHI, T

SEKIGUCHI, A

HOSOKAWA, N

ASAMAKI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 09期

关键词：

D O I：

10.1143/JJAP.27.L1775

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：L1775 / L1777

页数：3

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