BAND-GAP AND INTERGRAIN BARRIER ACTIVATION-ENERGIES IN BI90SB10 THIN-FILMS

被引：9

作者：

DAS, VD

JAGADEESH, MS

机构：

来源：

MATERIALS RESEARCH BULLETIN | 1981年 / 16卷 / 12期

关键词：

D O I：

10.1016/0025-5408(81)90027-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1547 / 1555

页数：9

共 27 条

[1] INTERCRYSTALLINE POTENTIAL BARRIERS DUE TO IRREGULARLY DISTRIBUTED TRAPS [J].

BEDNARCZYK, D ;

BEDNARCZYK, J ;

WEGRZYN, A .

THIN SOLID FILMS, 1976, 36 (01) :165-169

[2]

Chopra K.L, 1969, THIN FILM PHENOMENA

[3] SEMICONDUCTING BEHAVIOR IN ANTIMONY-DOPED BISMUTH-FILMS [J].

DAS, VD ;

JAGADEESH, MS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (01) :89-92

[4] ELECTRICAL-CONDUCTION IN BI40SB60 ALLOY THIN-FILMS [J].

DAS, VD ;

MEENA, N .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 104 (02) :K89-K93

[5]

DAS VD, 1977, J PHYS CHEM SOLIDS, V38, P167, DOI 10.1016/0022-3697(77)90161-5

[6] SEMICONDUCTING BEHAVIOR IN BI60SB40 ALLOY THIN-FILMS [J].

DAS, VD ;

JAGADEESH, MS .

VACUUM, 1981, 31 (02) :75-77

[7]

DAS VD, 1981, J MATERIALS SCI, V16

[8]

DAS VD, 1974, THIN SOLID FILMS, V24, P203

[9] QUANTUM SIZE EFFECT IN THIN BISMUTH FILMS [J].

DUGGAL, VP ;

RUP, R ;

TRIPATHI, P .

APPLIED PHYSICS LETTERS, 1966, 9 (08) :293-&

[10] MECHANISM OF PHOTOCONDUCTIVITY IN CHEMICALLY DEPOSITED LEAD SULFIDE LAYERS [J].

ESPEVIK, S ;

WU, CH ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3513-&

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