INFLUENCE OF ELECTRON-HOLE CORRELATIONS ON THE ABSORPTION OF GAAS IN THE PRESENCE OF NONTHERMALIZED CARRIERS

被引:15
作者
COLLET, JH [1 ]
HUNSCHE, S [1 ]
HEESEL, H [1 ]
KURZ, H [1 ]
机构
[1] RHEIN WESTFAL TH AACHEN KLINIKUM,INST HALBLEITERTECH 2,D-52074 AACHEN,GERMANY
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 15期
关键词
D O I
10.1103/PhysRevB.50.10649
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study, both theoretically and experimentally, the variations of the absorption coefficient of bulk GaAs in the presence of a nonthermalized electron-hole plasma. We investigate the changes of the Coulomb enhancement factor (CEF) due to nonthermal carrier distributions. For comparison with experimental data, time-dependent nonlinear absorption spectra are calculated using carrier distributions obtained from the numerical solution of Boltzmann's equations. Experimental absorption spectra are derived from differential transmission and reflectivity measurements of GaAs thin films in the subpicosecond regime. Both experimental and theoretical spectra show a redshift of the transient-hole-burning peak that can be attributed to the spectral dependence of the CEF changes. An induced absorption above the spectral hole is predicted for narrow distributions. This effect, which critically depends on the width of the carrier distributions, is strongly suppressed by fast collisional broadening in accordance with the experimental results.
引用
收藏
页码:10649 / 10655
页数:7
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