A METHOD TO PREDICT HARMONIC DISTORTION IN SMALL-GEOMETRY MOS ANALOG INTEGRATED-CIRCUITS

被引：3

作者：

THOMA, MJ ^{[1
]}

BAUMANN, WT ^{[1
]}

WESTGATE, CR ^{[1
]}

机构：

[1] JOHNS HOPKINS UNIV,DEPT ELECT ENGN & COMP SCI,BALTIMORE,MD 21218

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1987年 / 22卷 / 01期

关键词：

SEMICONDUCTOR DEVICES; MOS - SIGNAL FILTERING AND PREDICTION;

D O I：

10.1109/JSSC.1987.1052679

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method to predict the small-signal linear gain and level of harmonic distortion in analog MOS circuits is presented. This method, based on a generalized nonlinear transfer function approach, lends itself to implementation in the ac small-signal analysis routine of the circuit simulation program SPICE. A low-frequency nonlinear distortion model based on the CSIM simulator MOSFET model is applied to three simple MOSFET circuits. Results presented emphasize the need to consider small-signal quantities in the development of MOSFET models and in the determination of device parameters. The method can be easily extended to include capacitive effects and a prediction of intermodulation distortion.

引用

页码：106 / 109

页数：4

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