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A PARAMETRIC SHORT-CHANNEL MOS-TRANSISTOR MODEL FOR SUBTHRESHOLD AND STRONG INVERSION CURRENT
被引:58
作者
:
GROTJOHN, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
GROTJOHN, T
[
1
]
HOEFFLINGER, B
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
HOEFFLINGER, B
[
1
]
机构
:
[1]
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1984年
/ 31卷
/ 02期
关键词
:
D O I
:
10.1109/T-ED.1984.21507
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:234 / 246
页数:13
相关论文
共 19 条
[1]
CAD MODEL FOR THRESHOLD AND SUBTHRESHOLD CONDUCTION IN MOSFETS
ANTOGNETTI, P
论文数:
0
引用数:
0
h-index:
0
机构:
SGS ATES ELECTR COMPONENTS,MILAN,ITALY
SGS ATES ELECTR COMPONENTS,MILAN,ITALY
ANTOGNETTI, P
CAVIGLIA, DD
论文数:
0
引用数:
0
h-index:
0
机构:
SGS ATES ELECTR COMPONENTS,MILAN,ITALY
SGS ATES ELECTR COMPONENTS,MILAN,ITALY
CAVIGLIA, DD
PROFUMO, E
论文数:
0
引用数:
0
h-index:
0
机构:
SGS ATES ELECTR COMPONENTS,MILAN,ITALY
SGS ATES ELECTR COMPONENTS,MILAN,ITALY
PROFUMO, E
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1982,
17
(03)
: 454
-
458
[2]
ELECTRON AND HOLE DRIFT VELOCITY-MEASUREMENTS IN SILICON AND THEIR EMPIRICAL RELATION TO ELECTRIC-FIELD AND TEMPERATURE
CANALI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, VIA UNIVERSITA 4, MODENA, ITALY
UNIV MODENA, IST FIS, VIA UNIVERSITA 4, MODENA, ITALY
CANALI, C
MAJNI, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, VIA UNIVERSITA 4, MODENA, ITALY
UNIV MODENA, IST FIS, VIA UNIVERSITA 4, MODENA, ITALY
MAJNI, G
MINDER, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, VIA UNIVERSITA 4, MODENA, ITALY
UNIV MODENA, IST FIS, VIA UNIVERSITA 4, MODENA, ITALY
MINDER, R
OTTAVIANI, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, VIA UNIVERSITA 4, MODENA, ITALY
UNIV MODENA, IST FIS, VIA UNIVERSITA 4, MODENA, ITALY
OTTAVIANI, G
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(11)
: 1045
-
1047
[3]
VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON
COEN, RW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
COEN, RW
MULLER, RS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
MULLER, RS
[J].
SOLID-STATE ELECTRONICS,
1980,
23
(01)
: 35
-
40
[4]
COOPER JA, 1981, ELECTRON DEVIC LETT, V2, P171, DOI 10.1109/EDL.1981.25387
[5]
MOS MODELING BY ANALYTICAL APPROXIMATIONS .1. SUB-THRESHOLD CURRENT AND THRESHOLD VOLTAGE
FICHTNER, W
论文数:
0
引用数:
0
h-index:
0
机构:
LUDWIG BOLTZMANN INST FESTKORPERPHYS, A-1060 VIENNA, AUSTRIA
LUDWIG BOLTZMANN INST FESTKORPERPHYS, A-1060 VIENNA, AUSTRIA
FICHTNER, W
POTZL, HW
论文数:
0
引用数:
0
h-index:
0
机构:
LUDWIG BOLTZMANN INST FESTKORPERPHYS, A-1060 VIENNA, AUSTRIA
LUDWIG BOLTZMANN INST FESTKORPERPHYS, A-1060 VIENNA, AUSTRIA
POTZL, HW
[J].
INTERNATIONAL JOURNAL OF ELECTRONICS,
1979,
46
(01)
: 33
-
55
[6]
CONDUCTANCE OF MOS TRANSISTORS IN SATURATION
FROHMANB.D
论文数:
0
引用数:
0
h-index:
0
机构:
Research and Development Laboratory, Fairchild Semiconductor, Palo Alto, Calif.
FROHMANB.D
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
机构:
Research and Development Laboratory, Fairchild Semiconductor, Palo Alto, Calif.
GROVE, AS
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1969,
ED16
(01)
: 108
-
+
[7]
GROTJOHN T, 1984, THESIS U MINNESOTA
[8]
A SMALL GEOMETRY MOSFET MODEL FOR CAD APPLICATIONS
GUEBELS, PP
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN,B-1348 LOUVAIN LA NEUVE,BELGIUM
CATHOLIC UNIV LOUVAIN,B-1348 LOUVAIN LA NEUVE,BELGIUM
GUEBELS, PP
VANDEWIELE, F
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN,B-1348 LOUVAIN LA NEUVE,BELGIUM
CATHOLIC UNIV LOUVAIN,B-1348 LOUVAIN LA NEUVE,BELGIUM
VANDEWIELE, F
[J].
SOLID-STATE ELECTRONICS,
1983,
26
(04)
: 267
-
273
[9]
OUTPUT CHARACTERISTICS OF SHORT-CHANNEL FIELD-EFFECT TRANSISTORS
HOEFFLINGER, B
论文数:
0
引用数:
0
h-index:
0
HOEFFLINGER, B
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(08)
: 971
-
976
[10]
TWO-DIMENSIONAL DYNAMIC ANALYSIS OF SHORT-CHANNEL THIN-FILM MOS-TRANSISTORS USING A MINICOMPUTER
IPRI, AC
论文数:
0
引用数:
0
h-index:
0
机构:
JOHN FLUKE MFG CO, MOUNTLAKE TERRACE, WA USA
JOHN FLUKE MFG CO, MOUNTLAKE TERRACE, WA USA
IPRI, AC
MEDWIN, LB
论文数:
0
引用数:
0
h-index:
0
机构:
JOHN FLUKE MFG CO, MOUNTLAKE TERRACE, WA USA
JOHN FLUKE MFG CO, MOUNTLAKE TERRACE, WA USA
MEDWIN, LB
GOLDSMITH, N
论文数:
0
引用数:
0
h-index:
0
机构:
JOHN FLUKE MFG CO, MOUNTLAKE TERRACE, WA USA
JOHN FLUKE MFG CO, MOUNTLAKE TERRACE, WA USA
GOLDSMITH, N
BREHM, FW
论文数:
0
引用数:
0
h-index:
0
机构:
JOHN FLUKE MFG CO, MOUNTLAKE TERRACE, WA USA
JOHN FLUKE MFG CO, MOUNTLAKE TERRACE, WA USA
BREHM, FW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(04)
: 618
-
625
←
1
2
→
共 19 条
[1]
CAD MODEL FOR THRESHOLD AND SUBTHRESHOLD CONDUCTION IN MOSFETS
ANTOGNETTI, P
论文数:
0
引用数:
0
h-index:
0
机构:
SGS ATES ELECTR COMPONENTS,MILAN,ITALY
SGS ATES ELECTR COMPONENTS,MILAN,ITALY
ANTOGNETTI, P
CAVIGLIA, DD
论文数:
0
引用数:
0
h-index:
0
机构:
SGS ATES ELECTR COMPONENTS,MILAN,ITALY
SGS ATES ELECTR COMPONENTS,MILAN,ITALY
CAVIGLIA, DD
PROFUMO, E
论文数:
0
引用数:
0
h-index:
0
机构:
SGS ATES ELECTR COMPONENTS,MILAN,ITALY
SGS ATES ELECTR COMPONENTS,MILAN,ITALY
PROFUMO, E
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1982,
17
(03)
: 454
-
458
[2]
ELECTRON AND HOLE DRIFT VELOCITY-MEASUREMENTS IN SILICON AND THEIR EMPIRICAL RELATION TO ELECTRIC-FIELD AND TEMPERATURE
CANALI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, VIA UNIVERSITA 4, MODENA, ITALY
UNIV MODENA, IST FIS, VIA UNIVERSITA 4, MODENA, ITALY
CANALI, C
MAJNI, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, VIA UNIVERSITA 4, MODENA, ITALY
UNIV MODENA, IST FIS, VIA UNIVERSITA 4, MODENA, ITALY
MAJNI, G
MINDER, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, VIA UNIVERSITA 4, MODENA, ITALY
UNIV MODENA, IST FIS, VIA UNIVERSITA 4, MODENA, ITALY
MINDER, R
OTTAVIANI, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, VIA UNIVERSITA 4, MODENA, ITALY
UNIV MODENA, IST FIS, VIA UNIVERSITA 4, MODENA, ITALY
OTTAVIANI, G
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(11)
: 1045
-
1047
[3]
VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON
COEN, RW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
COEN, RW
MULLER, RS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
MULLER, RS
[J].
SOLID-STATE ELECTRONICS,
1980,
23
(01)
: 35
-
40
[4]
COOPER JA, 1981, ELECTRON DEVIC LETT, V2, P171, DOI 10.1109/EDL.1981.25387
[5]
MOS MODELING BY ANALYTICAL APPROXIMATIONS .1. SUB-THRESHOLD CURRENT AND THRESHOLD VOLTAGE
FICHTNER, W
论文数:
0
引用数:
0
h-index:
0
机构:
LUDWIG BOLTZMANN INST FESTKORPERPHYS, A-1060 VIENNA, AUSTRIA
LUDWIG BOLTZMANN INST FESTKORPERPHYS, A-1060 VIENNA, AUSTRIA
FICHTNER, W
POTZL, HW
论文数:
0
引用数:
0
h-index:
0
机构:
LUDWIG BOLTZMANN INST FESTKORPERPHYS, A-1060 VIENNA, AUSTRIA
LUDWIG BOLTZMANN INST FESTKORPERPHYS, A-1060 VIENNA, AUSTRIA
POTZL, HW
[J].
INTERNATIONAL JOURNAL OF ELECTRONICS,
1979,
46
(01)
: 33
-
55
[6]
CONDUCTANCE OF MOS TRANSISTORS IN SATURATION
FROHMANB.D
论文数:
0
引用数:
0
h-index:
0
机构:
Research and Development Laboratory, Fairchild Semiconductor, Palo Alto, Calif.
FROHMANB.D
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
机构:
Research and Development Laboratory, Fairchild Semiconductor, Palo Alto, Calif.
GROVE, AS
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1969,
ED16
(01)
: 108
-
+
[7]
GROTJOHN T, 1984, THESIS U MINNESOTA
[8]
A SMALL GEOMETRY MOSFET MODEL FOR CAD APPLICATIONS
GUEBELS, PP
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN,B-1348 LOUVAIN LA NEUVE,BELGIUM
CATHOLIC UNIV LOUVAIN,B-1348 LOUVAIN LA NEUVE,BELGIUM
GUEBELS, PP
VANDEWIELE, F
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN,B-1348 LOUVAIN LA NEUVE,BELGIUM
CATHOLIC UNIV LOUVAIN,B-1348 LOUVAIN LA NEUVE,BELGIUM
VANDEWIELE, F
[J].
SOLID-STATE ELECTRONICS,
1983,
26
(04)
: 267
-
273
[9]
OUTPUT CHARACTERISTICS OF SHORT-CHANNEL FIELD-EFFECT TRANSISTORS
HOEFFLINGER, B
论文数:
0
引用数:
0
h-index:
0
HOEFFLINGER, B
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(08)
: 971
-
976
[10]
TWO-DIMENSIONAL DYNAMIC ANALYSIS OF SHORT-CHANNEL THIN-FILM MOS-TRANSISTORS USING A MINICOMPUTER
IPRI, AC
论文数:
0
引用数:
0
h-index:
0
机构:
JOHN FLUKE MFG CO, MOUNTLAKE TERRACE, WA USA
JOHN FLUKE MFG CO, MOUNTLAKE TERRACE, WA USA
IPRI, AC
MEDWIN, LB
论文数:
0
引用数:
0
h-index:
0
机构:
JOHN FLUKE MFG CO, MOUNTLAKE TERRACE, WA USA
JOHN FLUKE MFG CO, MOUNTLAKE TERRACE, WA USA
MEDWIN, LB
GOLDSMITH, N
论文数:
0
引用数:
0
h-index:
0
机构:
JOHN FLUKE MFG CO, MOUNTLAKE TERRACE, WA USA
JOHN FLUKE MFG CO, MOUNTLAKE TERRACE, WA USA
GOLDSMITH, N
BREHM, FW
论文数:
0
引用数:
0
h-index:
0
机构:
JOHN FLUKE MFG CO, MOUNTLAKE TERRACE, WA USA
JOHN FLUKE MFG CO, MOUNTLAKE TERRACE, WA USA
BREHM, FW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(04)
: 618
-
625
←
1
2
→