MICROSCOPIC STRUCTURE OF SEMICONDUCTOR SURFACES

To study the initial reaction steps of hydrogen, oxygen, and water, on differently prepared single crystal surfaces of silicon, germanium/silicon alloys, indium phosphide and gallium arsenide, we used high-resolution electron energy-loss spectroscopy (HREELS) in combination with low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Very recently, we started a program on the hydrogenation of III-V compound semiconductors, and on the oxidation of Si and III-V compound semiconductors, using alkali metals as a catalyst. This paper summarizes the present stage of our investigations, describing in particular aspects of the microscopic structure of differently prepared semiconductor surfaces. © 1990 Springer-Verlag.