OPTICAL AND ELECTRICAL-PROPERTIES OF SNOX THIN-FILMS MADE BY REACTIVE RF MAGNETRON SPUTTERING

被引：15

作者：

STJERNA, B ^{[1
]}

GRANQVIST, CG ^{[1
]}

机构：

[1] GOTHENBURG UNIV, S-41296 GOTHENBURG, SWEDEN

来源：

THIN SOLID FILMS | 1990年 / 193卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(90)90222-Y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SnO(x) films were made by reactive r.f. magnetron sputtering of tin in Ar-O2 onto unheated glass. At a well-defined O2-to-Ar gas flow ratio, one could obtain an electrical resistivity of about 10(-2)-OMEGA-cm, a luminous transmittance of about 75% and a deposition rate of about 3 nms-1. The optical and electrical properties could be quantitatively understood from a theoretical model for wide-band-gap semiconductors, heavily n-type doped by doubly ionized oxygen vacancies, that accounted for ionized impurity scattering of the free electrons.

引用

页码：704 / 711

页数：8

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