INTERFACE ROUGHNESS DURING THERMAL AND ION-INDUCED REGROWTH OF AMORPHOUS LAYERS ON SI(001)

被引：18

作者：

LOHMEIER, M

DEVRIES, S

CUSTER, JS

VLIEG, E

FINNEY, MS

PRIOLO, F

BATTAGLIA, A

机构：

[1] UNIV LEICESTER,DEPT PHYS & ASTRON,LEICESTER LE1 7RH,ENGLAND

[2] UNIV CATANIA,DIPARTIMENTO FIS,I-95129 CATANIA,ITALY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 14期

关键词：

D O I：

10.1063/1.111787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The roughness of Si(001) amorphous/crystalline interfaces, regrown by either solid phase epitaxy (SPE) or ion-beam-induced epitaxial crystallization (IBIEC), has been studied by measuring the scattered x-ray intensity along crystal truncation rods close to Si bulk Bragg peaks. For both regrowth methods, the interface region is well described by a discrete roughness profile. The root-mean-square roughnesses are comparable and rather small: 8.0+/-0.6 angstrom and 7.4+/-0.6 angstrom for the SPE and the IBIEC regrown sample, respectively. This indicates the presence of a common smoothing mechanism.

引用

页码：1803 / 1805

页数：3

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