GROWTH-SITE-LIMITED CRYSTALLIZATION OF AMORPHOUS-SILICON

被引：23

作者：

CUSTER, JS ^{[1
]}

BATTAGLIA, A ^{[1
]}

SAGGIO, M ^{[1
]}

PRIOLO, F ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.69.780

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The ion-beam-induced epitaxial crystallization rate of amorphous Si was measured by time-resolved reflectivity on crystal substrates with orientations every 5-degrees from (100) to (111) to (011). The measurements show that the (011) regrows 3% slower than the (100), and the regrowth rate steadily decreases with increasing misorientation towards the (111). These data can be explained using a growth-site-limited model wherein a beam-induced defect flux to the interface results in a growth rate dependent on the interfacial bonding configuration.

引用

页码：780 / 783

页数：4

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