A DEFECT MODEL FOR ION-INDUCED CRYSTALLIZATION AND AMORPHIZATION

被引：145

作者：

JACKSON, KA

机构：

[1] AT&T Bell Lab, United States

来源：

JOURNAL OF MATERIALS RESEARCH | 1988年 / 3卷 / 06期

关键词：

D O I：

10.1557/JMR.1988.1218

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1218 / 1226

页数：9

共 16 条

[1] Brown W. L., 1987, Microscopy of Semiconducting Materials, 1987. Proceedings of the Institute of Physics Conference, P61
[2] BROWN WL, 1987, COMMUNICATION
[3] Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443
[4] ION-BEAM-INDUCED CRYSTALLIZATION AND AMORPHIZATION OF SILICON
ELLIMAN, RG
WILLIAMS, JS
BROWN, WL
LEIBERICH, A
MAHER, DM
KNOELL, RV
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 435 - 442
[5] ION-BEAM INDUCED EPITAXY OF SILICON
GOLECKI, I
CHAPMAN, GE
LAU, SS
TSAUR, BY
MAYER, JW
[J]. PHYSICS LETTERS A, 1979, 71 (2-3) : 267 - 269
[6] RADIATION ENHANCED ANNEALING OF RADIATION-DAMAGE IN GE
HOLMEN, G
PETERSTROM, S
BUREN, A
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 24 (01): : 45 - 50
[7] RADIATION-DAMAGE IN GE PRODUCED BY NOBLE-GAS IONS INVESTIGATED BY SECONDARY-ELECTRON EMISSION METHOD
HOLMEN, G
HOGBERG, P
BUREN, A
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 24 (01): : 39 - 44
[8] ION-BEAM INDUCED CRYSTALLIZATION AND AMORPHIZATION AT A CRYSTALLINE AMORPHOUS INTERFACE IN [100] SILICON
LEIBERICH, A
MAHER, DM
KNOELL, RV
BROWN, WL
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 457 - 461
[9] ION-BEAM-INDUCED EPITAXIAL REGROWTH OF AMORPHOUS LAYERS IN SILICON ON SAPPHIRE
LINNROS, J
SVENSSON, B
HOLMEN, G
[J]. PHYSICAL REVIEW B, 1984, 30 (07): : 3629 - 3638
[10] PROPORTIONALITY BETWEEN ION-BEAM-INDUCED EPITAXIAL REGROWTH IN SILICON AND NUCLEAR-ENERGY DEPOSITION
LINNROS, J
HOLMEN, G
SVENSSON, B
[J]. PHYSICAL REVIEW B, 1985, 32 (05): : 2770 - 2777

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