ELECTRON-MICROSCOPIC STUDIES OF SILICON LAYERS IRRADIATED WITH HIGH DOSES OF NITROGEN-IONS

被引：16

作者：

PAVLOV, PV ^{[1
]}

KRUZE, TA ^{[1
]}

TETELBAUM, DI ^{[1
]}

ZORIN, EI ^{[1
]}

SHITOVA, EV ^{[1
]}

GUDKOVA, NV ^{[1
]}

机构：

[1] GORKI PHYSICO-TECH RES INST,GORKI,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 36卷 / 01期

关键词：

D O I：

10.1002/pssa.2210360108

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：81 / 88

页数：8

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[2]

Astakhov V. P., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P2128

[3]

BELANOVSKII AS, 1968, REV ELECTRONIC TECHN, V15, P11

[4]

BORDERS JA, 1971, 2 INT C ION IMPL SEM, P241

[5]

CUFHIC RB, 1974, J MATER SCI, V9, P1363

[6] THERMAL OXIDATION OF SILICON AFTER ION-IMPLANTATION [J].

FRITZSCH.CR ;

ROTHEMUN.W .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1603-1605

[7]

GORELIK SS, 1974, ELEKTRONNAYA TEKH 2, P48

[8] CRYSTAL STRUCTURES OF SILICON NITRIDE [J].

HARDIE, D ;

JACK, KH .

NATURE, 1957, 180 (4581) :332-333

[9]

Lyubov B.Y., 1969, KINETIC THEORY PHASE

[10]

Mayer J. W., 1970, ION IMPLANTATION SEM

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