THERMAL OXIDATION OF SILICON AFTER ION-IMPLANTATION

[1] BORDERS JA, 1971, 2 INT C ION IMPL SEM, P241

[2] A LOW-STRESS INSULATING FILM ON SILICON BY CHEMICAL VAPOR DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4458 - &

[3] FAESSLER A, 1959, ANN PHYS, V4, P263

[4] ION IMPLANTATION AND ANNEALING EFFECTS IN SIO2 LAYERS ON SILICON STUDIED BY OPTICAL MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (09) : 1243 - +

[5] JOHNSON WS, 1969, PROJECTED RANGE STAT

[6] NITROGEN IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (03) : 427 - 431

[7] VIBRATION FREQUENCIES AND BINDING FORCES IN SOME SILICATE GROUPS [J]. JOURNAL OF CHEMICAL PHYSICS, 1949, 17 (08) : 679 - 685

[8] Mayer J. W., 1970, ION IMPLANTATION SEM

[9] Ritter E., 1962, J MOD OPTIC, V9, P197, DOI [10.1080/713826414, DOI 10.1080/713826414]

[10] SOLID SOLUTION IN SILICON NITRIDE-SILICON DIOXIDE SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 862 - &

[1] BORDERS JA, 1971, 2 INT C ION IMPL SEM, P241

[2] A LOW-STRESS INSULATING FILM ON SILICON BY CHEMICAL VAPOR DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4458 - &

[3] FAESSLER A, 1959, ANN PHYS, V4, P263

[4] ION IMPLANTATION AND ANNEALING EFFECTS IN SIO2 LAYERS ON SILICON STUDIED BY OPTICAL MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (09) : 1243 - +

[5] JOHNSON WS, 1969, PROJECTED RANGE STAT

[6] NITROGEN IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (03) : 427 - 431

[7] VIBRATION FREQUENCIES AND BINDING FORCES IN SOME SILICATE GROUPS [J]. JOURNAL OF CHEMICAL PHYSICS, 1949, 17 (08) : 679 - 685

[8] Mayer J. W., 1970, ION IMPLANTATION SEM

[9] Ritter E., 1962, J MOD OPTIC, V9, P197, DOI [10.1080/713826414, DOI 10.1080/713826414]

[10] SOLID SOLUTION IN SILICON NITRIDE-SILICON DIOXIDE SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 862 - &