SOLID SOLUTION IN SILICON NITRIDE-SILICON DIOXIDE SYSTEM

被引：29

作者：

TOMBS, NC

SEWELL, FA

COMER, JJ

机构：

[1] Sperry Rand Research Center, Sudbury, Massachusetts

[2] National Aeronautics and Space Administration, Electronics Research Center, Cambridge, Massachusetts

[3] Air Force Cambridge Research Laboratory, Bedford, Massachusetts

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 06期

关键词：

electron microscopy; silicon nitride films; silicon oxynitride films; solid solution;

D O I：

10.1149/1.2412079

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

收藏

页码：862 / &

相关论文

共 10 条

[1] METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY
BOOKER, GR
STICKLER, R
[J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09): : 446 - &
[2] PROPERTIES OF SIXOYNZ FILMS ON SI
BROWN, DM
GRAY, PV
HEUMANN, FK
PHILIPP, HR
TAFT, EA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 311 - &
[3] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
BROWN, GA
ROBINETT.WC
CARLSON, HG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 948 - &
[4] FILMS OF SILICON NITRIDE-SILICON DIOXIDE MIXTURES
CHU, TL
SZEDON, JR
LEE, CH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 318 - &
[5] STRUCTURE OF SILICON OXIDE FILMS
COLEMAN, MV
THOMAS, DJD
[J]. PHYSICA STATUS SOLIDI, 1967, 22 (02): : 593 - &
[6] STRUCTURE OF AMORPHOUS SILICON NITRIDE FILMS
COLEMAN, MV
THOMAS, DJD
[J]. PHYSICA STATUS SOLIDI, 1968, 25 (01): : 241 - &
[7] PROPERTY CHANGES IN PYROLYTIC SILICON NITRIDE WITH REACTANT COMPOSITION CHANGES
DOO, VY
KERR, DR
NICHOLS, DR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) : 61 - &
[8] A LOW-STRESS INSULATING FILM ON SILICON BY CHEMICAL VAPOR DEPOSITION
DRUM, CM
RAND, MJ
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4458 - &
[9] TOMBS NC, 1969, Patent No. 3422321
[10] TOMBS NC, 1966, P IEEE, V54, P88